Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/831
Full metadata record
DC FieldValueLanguage
dc.contributor.authorA. F Qasrawi-
dc.contributor.authorn. m.gasanly-
dc.date.accessioned2020-02-10T12:42:11Z-
dc.date.available2020-02-10T12:42:11Z-
dc.date.issued2008-
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2007.06.025-
dc.description.abstractThe room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved.-
dc.publisherMATERIALS RESEARCH BULLETIN-
dc.subjectsemiconductors; crystal growth; X-ray diffraction; optical properties-
dc.titleCrystal data and indirect optical transitions in Tl2InGaSe4 crystals-
dc.typeArticle-
Appears in Collections:Faculty & Staff Scientific Research publications

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Admin Tools