Please use this identifier to cite or link to this item:
|Title:||Carrier transport properties of InS single crystals|
|Authors:||A. F Qasrawi|
|Keywords:||InS crystal; resistivity; mobility; acoustic; polar; scattering mechanism|
|Publisher:||CRYSTAL RESEARCH AND TECHNOLOGY|
|Abstract:||The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m(0), a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.