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|dc.contributor.author||A. F Qasrawi||-|
|dc.description.abstract||Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.||-|
|dc.publisher||CRYSTAL RESEARCH AND TECHNOLOGY||-|
|dc.subject||GaS0.5Se0.5 crystals; resistivity; Hall mobility; scattering mechanisms||-|
|dc.title||Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals||-|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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