Please use this identifier to cite or link to this item:
|Title:||Structural and electrical properties of Cd doped InSe thin films|
|Authors:||A. F Qasrawi|
|Keywords:||p-InSe; thin film; conductivity; mobility; transport mechanisms|
|Publisher:||CRYSTAL RESEARCH AND TECHNOLOGY|
|Abstract:||Polycrystalline Cd doped InSe thin films were obtained by thermal co-evaporation of alpha -In2Se3 lumps and Cd onto glass substrates at a temperature of 150 degreesC. The films were annealed at 150 degrees and 200 degreesC. The films were found to contain around 46% In, 47% Se and 7% Cd in weight. The films exhibited p-type conductivity. The results of conductivity measurements have revealed that thermionic emission and variable range hopping are the two dominant conduction mechanisms, in the temperature ranges of 320-160 K and150-40 K respectively. It was observed that above 240 K mobility is limited by the scattering at the grain boundaries. As the temperature decreases, thermal lattice scattering followed by the ionized impurity scattering dominate as the two main mechanisms controlling the mobility. Acceptor. to donor concentration ratio was Found to be slightly increasing due to annealing.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.