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|dc.contributor.author||A. F Qasrawi||-|
|dc.contributor.author||renal r. n.kmail||-|
|dc.description.abstract||In this work, the optical conduction mechanism in GaSe thin films was explored by means of dielectric spectral analysis in the 270-1000 THz range of frequency. The GaSe films which are found to be amorphous in nature are observed to follow the Lorentz approach for optical conduction. The modeling of the optical conductivity which takes into account the damped electronic motion resulting from the collision of photogenerated carriers with impurities, phonons and other damping sources allowed determining the optical conduction parameters. Particularly, an average carrier scattering time, a free carrier density, a reduced resonant frequency, a field effect mobility and an electron bounded plasma frequency of 0.142 (fs), 1.7 x 10(19) (cm(-3)), 875.8 (THz), 1.25 (cm(2)/Vs) and 82.8 (THz), respectively, were determined. These parameters are promising as they indicate the applicability of GaSe in the technology of mid-infrared plasmonic nanoantennas. In addition, the dielectric optical signal which displayed a resonance peak at 500 THz seems to be attractive for use in passive modes operating optoelectronic devices like field effect transistors as they exhibit an increasing signal quality factor with decreasing incident light frequency (C) 2016 Elsevier GmbH. All rights reserved.||-|
|dc.subject||Thin film; Optical conductivity; GaSe; Plasma frequency||-|
|dc.title||Optical conduction in amorphous GaSe thin films||-|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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