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|Title:||Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals|
|Authors:||A. F Qasrawi|
gasanly, n. m.$Other$Other
|Publisher:||PHYSICA B-CONDENSED MATTER|
|Citation:||Volume 407, Issue 14, 15 July 2012, Pages 2749-2752|
|Abstract:||The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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