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Title: Structural, electrical and anisotropic properties of Tl4Se3S chain crystals
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: Semiconductors
Crystal growth
X-ray technique
Electrical properties
Issue Date: 2009
Citation: Volume 44, Issue 10, October 2009, Pages 2009-2013
Abstract: The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.
Appears in Collections:Faculty & Staff Scientific Research publications

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