Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/1140
Title: Structural, electrical and anisotropic properties of Tl4Se3S chain crystals
Authors: A. F Qasrawi
gasanly, n. m.$Other$Other
Keywords: Semiconductors
Crystal growth
X-ray technique
Electrical properties
Issue Date: 2009
Publisher: MATERIALS RESEARCH BULLETIN
Citation: Volume 44, Issue 10, October 2009, Pages 2009-2013
Abstract: The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.
URI: http://repository.aaup.edu/jspui/handle/123456789/1140
ISSN: https://doi.org/10.1016/j.materresbull.2009.06.004
Appears in Collections:Faculty & Staff Scientific Research publications

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