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|Title:||Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals|
|Authors:||A. F Qasrawi|
|Keywords:||semiconductors; Chalcogenides; layered compounds; defects; electrical properties|
|Publisher:||MATERIALS RESEARCH BULLETIN|
|Abstract:||Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Faculty & Staff Scientific Research publications|
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