Please use this identifier to cite or link to this item: http://repository.aaup.edu/jspui/handle/123456789/865
Title: Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals
Authors: A. F Qasrawi
nm.gasanly
Keywords: GaS0.5Se0.5 crystals; resistivity; Hall mobility; scattering mechanisms
Issue Date: 2002
Publisher: CRYSTAL RESEARCH AND TECHNOLOGY
Abstract: Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.
URI: https://doi.org/10.1002/1521-4079(200206)37:6<587::AID-CRAT587>3.0.CO;2-Z
Appears in Collections:Faculty & Staff Scientific Research publications

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